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| BLF6G20-45 UHF power LDMOS transistor Rev. 01 -- 20 February 2006 Objective data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1: Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 1805 to 1880 VDS (V) 28 PL(AV) (W) 2.5 Gp (dB) 17 D (%) 14 ACPR (dBc) -50 [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features s Typical 2-carrier W-CDMA performance at frequencies of 1805 MHz and 1880 MHz, a supply voltage of 28 V and an IDq of 350 mA: x Average output power = 2.5 W x Power gain = 17 dB (typ) x Efficiency = 14 % x ACPR = -50 dBc s Easy power control s Integrated ESD protection s Excellent ruggedness s High efficiency s Excellent thermal stability s Designed for broadband operation (1800 MHz to 2000 MHz) s Internally matched for ease of use 1.3 Applications s RF power amplifiers for W-CDMA base stations and multi carrier applications in the 1800 MHz to 2000 MHz frequency range. Philips Semiconductors BLF6G20-45 UHF power LDMOS transistor 2. Pinning information Table 2: Pin 1 2 3 Pinning Description drain gate source [1] Simplified outline 1 Symbol 3 2 [1] Connected to flange 3. Ordering information Table 3: Ordering information Package Name BLF6G20-45 Description flanged ceramic package; 2 mounting holes; 2 leads Version SOT608A Type number 4. Limiting values Table 4: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Tstg Tj Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature Conditions Min -0.5 -65 Max 65 +13 +150 225 Unit V V C C 5. Thermal characteristics Table 5: Symbol Rth(j-case) Thermal characteristics Parameter thermal resistance from junction to case Conditions Tcase = 80 C; PL = BLF6G20-45_1 (c) Koninklijke Philips Electronics N.V. 2006. All rights reserved. Objective data sheet Rev. 01 -- 20 February 2006 2 of 8 Philips Semiconductors BLF6G20-45 UHF power LDMOS transistor 6. Characteristics Table 6: Characteristics Tj = 25 C per section; unless otherwise specified Symbol Parameter V(BR)DSS drain-source breakdown voltage VGS(th) VGSq IDSS IDSX IGSS gfs RDS(on) Crs gate-source threshold voltage gate-source quiescent voltage drain leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance feedback capacitance Conditions VGS = 0 V; ID = 0.5 mA VDS = 10 V; ID = 60 mA VDS = 28 V; ID = 300 mA VGS = 0 V; VDS = 28 V VGS = VGS(th) + 3.75 V; VDS = 10 V VGS = 13 V; VDS = 0 V VDS = 10 V; ID = 3 A VGS = VGS(th) + 3.75 V; ID = 2.1 A VGS = 0 V; VDS = 28 V; f = 1 MHz Min 65 Typ Max Unit V 7. Application information Table 7: Application information Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test model 1; 1-64 PDPCH; f1 = 1807.5 MHz; f2 = 1812.5 MHz; f3 = 1872.5 MHz; f4 = 1877.5 MHz; RF performance at VDS = 28 V; IDq = 2 x 900 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit Symbol PL(AV) Gp D IMD3 ACPR Parameter average output power power gain drain efficiency third order intermodulation distortion adjacent channel power ratio PL(AV) = 2.5 W PL(AV) = 2.5 W PL(AV) = 2.5 W PL(AV) = 2.5 W Conditions Min Typ 2.5 Max Unit W dB % 7.1 Ruggedness in class-AB operation The BLF6G20-45 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 350 mA; PL = 45 W (CW); f = 1880 MHz. BLF6G20-45_1 (c) Koninklijke Philips Electronics N.V. 2006. All rights reserved. Objective data sheet Rev. 01 -- 20 February 2006 3 of 8 Philips Semiconductors BLF6G20-45 UHF power LDMOS transistor 8. Package outline Flanged ceramic package; 2 mounting holes; 2 leads SOT608A D A F 3 D1 U1 q C B c 1 H U2 p E1 E w1 M A M B M A b 2 w2 M C M Q 0 5 scale 10 mm DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.62 3.76 0.182 0.148 b 7.24 6.99 c 0.15 0.10 D D1 E E1 F 1.14 0.89 H 15.75 14.73 p 3.30 2.92 0.130 0.115 Q 1.70 1.35 q 15.24 U1 20.45 20.19 0.805 0.795 U2 9.91 9.65 w1 0.25 w2 0.51 10.21 10.29 10.01 10.03 0.402 0.405 0.394 0.395 10.21 10.29 10.01 10.03 0.402 0.405 0.394 0.395 0.285 0.006 0.275 0.004 0.045 0.620 0.035 0.580 0.067 0.600 0.053 0.390 0.010 0.020 0.380 OUTLINE VERSION SOT608A REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 01-02-22 02-02-11 Fig 1. Package outline SOT608A BLF6G20-45_1 (c) Koninklijke Philips Electronics N.V. 2006. All rights reserved. Objective data sheet Rev. 01 -- 20 February 2006 4 of 8 Philips Semiconductors BLF6G20-45 UHF power LDMOS transistor 9. Abbreviations Table 8: Acronym 3GPP CCDF CW DPCH LDMOS PAR PDPCH RF VSWR W-CDMA Abbreviations Description Third Generation Partnership Project Complementary Cumulative Distribution Function Continuous Wave Dedicated Physical CHannel Laterally Diffused Metal Oxide Semiconductor Peak-to-Average power Ratio transmission Power of the Dedicated Physical CHannel Radio Frequency Voltage Standing Wave Ratio Wideband Code Division Multiple Access BLF6G20-45_1 (c) Koninklijke Philips Electronics N.V. 2006. All rights reserved. Objective data sheet Rev. 01 -- 20 February 2006 5 of 8 Philips Semiconductors BLF6G20-45 UHF power LDMOS transistor 10. Revision history Table 9: Revision history Release date 20060220 Data sheet status Objective data sheet Change notice Doc. number Supersedes Document ID BLF6G20-45_1 BLF6G20-45_1 (c) Koninklijke Philips Electronics N.V. 2006. All rights reserved. Objective data sheet Rev. 01 -- 20 February 2006 6 of 8 Philips Semiconductors BLF6G20-45 UHF power LDMOS transistor 11. Data sheet status Level I II Data sheet status [1] Objective data Preliminary data Product status [2] [3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). III Product data Production [1] [2] [3] Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 12. Definitions Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 14. Trademarks Notice -- All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Disclaimers Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors 15. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com BLF6G20-45_1 (c) Koninklijke Philips Electronics N.V. 2006. All rights reserved. Objective data sheet Rev. 01 -- 20 February 2006 7 of 8 Philips Semiconductors BLF6G20-45 UHF power LDMOS transistor 16. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 8 9 10 11 12 13 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . General description. . . . . . . . . . . . . . . . . . . . . . Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . Pinning information . . . . . . . . . . . . . . . . . . . . . . Ordering information . . . . . . . . . . . . . . . . . . . . . Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . Thermal characteristics. . . . . . . . . . . . . . . . . . . Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . Application information. . . . . . . . . . . . . . . . . . . Ruggedness in class-AB operation. . . . . . . . . . Package outline . . . . . . . . . . . . . . . . . . . . . . . . . Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . Revision history . . . . . . . . . . . . . . . . . . . . . . . . . Data sheet status . . . . . . . . . . . . . . . . . . . . . . . . Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . . Contact information . . . . . . . . . . . . . . . . . . . . . 1 1 1 1 2 2 2 2 3 3 3 4 5 6 7 7 7 7 7 (c) Koninklijke Philips Electronics N.V. 2006 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 20 February 2006 Document number: BLF6G20-45_1 Published in The Netherlands |
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